Partenaires

CNRS Universite Grenoble Alpes UPS LaNEF INSA TOULOUSE EMFL NEXT

Accueil


Accueil du site > Evènements du laboratoire > Séminaires > Archives - Séminaires 2014 > Charge tuning of Nonresonant Magnetoexciton Phonon Interactions in Graphene

English

Charge tuning of Nonresonant Magnetoexciton Phonon Interactions in Graphene

11/03/2014, Bennett B. Goldberg (Boston University Masachussetts, USA)


Far from resonance, the coupling of the G-band phonon to magnetoexcitons in single layer graphene displays kinks and splittings versus filling factor that are well described by Pauli blocking and unblocking of inter- and intra-Landau level transitions. We explore the nonresonant electron-phonon coupling by high-magnetic field Raman scattering while electrostatic tuning of the carrier density controls the filling factor.
We show qualitative and quantitative agreement between spectra and a linearized model of electron-phonon interactions in magnetic fields. The splitting is caused by dichroism of left- and right-handed circular polarized light due to lifting of the G-band phonon degeneracy, and the piecewise linear slopes are caused by the linear occupancy of sequential Landau levels versus ν.

Ref. Phys. Rev. Lett. 112, 056803 (2014)

Contact person : Marek Potemski, tel : 0476887876