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TMDs

Atomically thin layers of semiconducting transition metal dichalcogenides (S-TMDs) represent a new class of materials which are of vivid interest, primary in the area of the semiconductor physics and nanoscience as well as opto-electronic applications. The studies of thin films of S-TMDs are greatly inspired by and profit from the research and developments focused on graphene-based systems. Viewed as a part of the “beyond graphene research”, the studies of thin films of S-TMDs are largely at the level of basic research, aiming to enlighten their fundamental properties and potentially new functionalities. The investigations of optical properties represent one of the main directions of research on S-TMD layers.

The direct-to-indirect band gap crossover in two-dimensional van der Waals Indium Selenide crystals

The electronic band structure of van der Waals (vdW) layered crystals has properties that depend on the composition, thickness and stacking of the component layers. Here we use density functional theory and high field magneto-optics to investigate the metal chalcogenide InSe, a recent addition to the family of vdW layered crystals, which transforms from a direct to an indirect band gap semiconductor as the number of layers is reduced. We investigate this direct-to-indirect bandgap (...)

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Brightening of dark excitons in monolayers of semiconducting transition metal dichalcogenides

We present low-temperature magneto-photoluminescence experiments which demonstrate the brightening of dark excitons by an in-plane magnetic field B applied to monolayers of different semiconducting transition metal dichalcogenides. For WSe2 and WS2 monolayers, the dark exciton emission is observed at ∼50 meV below the bright exciton peak and displays a characteristic doublet structure whose intensity grows with B^2 , while no magnetic field induced emission peaks appear for MoSe2 (...)

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Valley Zeeman Splitting and Valley Polarization of Neutral and Charged Excitons in Monolayer MoTe2 at High Magnetic Fields

Semiconducting transition metal dichalcogenides (TMDCs) give rise to interesting new phenomena in external magnetic fields, such as valley Zeeman splitting and magnetic-field-induced valley polarization. These effects have been reported for monolayers (MLs) of the transition metal diselenides MoSe2 and WSe2 and, more recently, for disulfides MoS2 and WS2 . Here, we present helicity-resolved magneto-photoluminescence and magneto-reflectance contrast measurements for MLs of the telluride (...)

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Raman scattering of few-layers MoTe2

We report on room-temperature Raman scattering measurements in few-layer crystals of exfoliated molybdenum ditelluride ( MoTe2) performed with the use of 632.8 nm (1.96 eV) laser light excitation. In agreement with a recent study reported by Froehlicher et al (2015 Nano Lett. 15 6481) we observe a complex structure of the out-of-plane vibrational modes ( A1g/A1’), which can be explained in terms of interlayer interactions between single atomic planes of MoTe2. In the case of low-energy shear (...)

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Radiatively Limited Dephasing and Exciton Dynamics in MoSe2 Monolayers Revealed with Four-Wave Mixing Microscopy

By implementing four-wave mixing (FWM) microspectroscopy, we measure coherence and population dynamics of the exciton transitions in monolayers of MoSe2 . We reveal their dephasing times T2 and radiative lifetime T1 in a subpicosecond (ps) range, approaching T2 = 2T1 and thus indicating radiatively limited dephasing at a temperature of 6 K. We elucidate the dephasing mechanisms by varying the temperature and by probing various locations on the flake exhibiting a different local disorder. At the (...)

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Tuning Valley Polarization in a WSe2 Monolayer with a Tiny Magnetic Field

In monolayers of semiconducting transition metal dichalcogenides, the light helicity is locked to the valley degree of freedom, leading to the possibility of optical initialization of distinct valley populations. However, an extremely rapid valley pseudospin relaxation (at the time scale of picoseconds) occurring for optically bright (electric-dipole active) excitons imposes some limitations on the development of opto-valleytronics. Here, we show that valley pseudospin relaxation of (...)

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Exciton band structure in layered MoSe2 : from a monolayer to the bulk limit

We present the micro-photoluminescence (μPL) and micro-reflectance contrast (μRC) spectroscopy studies on thin films of MoSe 2 with layer thicknesses ranging from a monolayer (1L) up to 5L. The thickness dependent evolution of the ground and excited state excitonic transitions taking place at various points of the Brillouin zone is determined. Temperature activated energy shifts and linewidth broadenings of the excitonic resonances in 1L, 2L and 3L flakes are accounted for by using standard (...)

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Single photon emitters in exfoliated WSe2 structures

Crystal structure imperfections in solids often act as efficient carrier trapping centres, which, when suitably isolated, act as sources of single photon emission. The best known examples of such attractive imperfections are well-width or composition fluctuations in semiconductor heterostructures (resulting in the formation of quantum dots) and coloured centres in wide-bandgap materials such as diamond. In the recently investigated thin films of layered compounds, the crystal imperfections may (...)

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Indirect-to-Direct Band Gap Crossover in Few-Layer MoTe2

We study the evolution of the band gap structure in few-layer MoTe2 crystals, by means of low-temperature microreflectance (MR) and temperature-dependent photoluminescence (PL) measurements. The analysis of the measurements indicate that in complete analogy with other semiconducting transition metal dichalchogenides (TMDs) the dominant PL emission peaks originate from direct transitions associated with recombination of excitons and trions. When we follow the evolution of the PL intensity as (...)

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Excitonic resonances in thin films of WSe2 : from monolayer to bulk material

We present optical spectroscopy (photoluminescence and reflectance) studies of thin layers of the transition metal dichalcogenide WSe2, with thickness ranging from mono- to tetra-layer and in the bulk limit. The investigated spectra show the evolution of excitonic resonances as a function of layer thickness, due to changes in the band structure and, importantly, due to modifications of the strength of Coulomb interactions as well. The observed temperature-activated energy shift and broadening (...)

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Resonance effects in the Raman scattering of mono- and few layers MoSe2

Using resonant Raman scattering spectroscopy with 25 different laser lines, we describe the Raman scattering spectra of monolayer and multilayer 2H-molybdenum diselenide (MoSe2) as well as the different resonances affecting the most pronounced features. For high-energy phonons, both A- and E-symmetry type phonons present resonances with A and B excitons of MoSe2 together with a marked increase of intensity when exciting at higher energy, close to the C-exciton energy. We observe (...)

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